"Our Intel 3 is now in volume production at our facilities in Oregon and Ireland, including for the recently launched Xeon 6 'Sierra Forest' and 'Granite Rapids' processors," stated Walid Hafez, Vice President of Intel Foundry Technology Development.
Intel has consistently positioned the Intel 3 manufacturing process for data center applications, which require cutting-edge performance through improved transistors (compared to Intel 4), reduced transistor via resistance in the power delivery circuits, and design co-optimization. The production node supports <0.6V low voltage and >1.3V high voltage for maximum load. In terms of performance, Intel promises an 18% increase in performance at the same power and transistor density levels.
For the optimal combination of performance and density, chip designers must utilize a combination of 240nm high-performance and 210nm high-density libraries. Additionally, Intel customers can choose between three metal stack options: a 14-layer version to reduce costs, an 18-layer version for the best balance between performance and cost, and a 21-layer version for higher performance.
Currently, Intel is using its 3nm class process technology to manufacture Xeon 6 data center processors. Eventually, Intel's foundries will use this production node to manufacture data center-grade processors for customers.
Besides the standard Intel 3, the company will also offer Intel 3T, which supports through-silicon vias and can be used as a base chip. In the future, Intel plans to provide the enhanced-functionality Intel 3-E for chip and storage applications, as well as Intel 3-PT for performance enhancement in various workloads such as artificial intelligence (AI)/high-performance computing (HPC), and general PC performance.