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STMicroelectronics’ New Series of 1350V IGBT Transistors Improves Variability and Efficiency

Every technological advancement in electronic components is like the dawn in the morning, announcing the arrival of new application fields. STMicroelectronics’ latest release of 1350V series IGBT transistors is not only a continuous optimization of traditional electronic technology but also a leap-forward innovation in the future electronics field.

Figure 1: STMicroelectronics 1350V Series IGBT Transistors

Before introducing this new product, let us understand what IGBT (Insulated Gate Bipolar Transistor) is. An IGBT is a semiconductor device that combines the high input impedance of a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with the low turn-on voltage of a BJT (Bipolar Transistor). Due to this feature, the IGBT transistor combines the advantages of both and has better conduction characteristics and higher voltage withstand capability compared to other semiconductor devices such as MOSFET and BJT.

The latest series of IGBT transistors offers significant advances. The breakdown voltage has been increased to 1350V, while the maximum operating temperature now reaches 175°C. These improvements aren't just numerical; they mean that these transistors can perform exceptionally well in more demanding environments. Breakdown voltage is a critical parameter as it determines the maximum reverse bias voltage that a semiconductor device can handle without being damaged. With a higher breakdown voltage, the device can operate at elevated voltages without any issues. The increase in operating temperature is also noteworthy, enabling IGBT transistors to remain stable even in high-temperature environments. This becomes particularly crucial for applications with extreme heat requirements

The power conversion efficiency of STPOWER IH2 series IGBT transistors has also attracted widespread attention in the industry. In the era of energy conservation and environmental protection, energy efficiency is crucial for modern electronic equipment. A highlight that cannot be ignored is the low value of its saturation voltage Vce(sat), which ensures that the power consumption of the device is minimized in the on-state, thus providing a strong backing for the stable operation of the system.

Figure 2: STMicroelectronics 1350V Series IGBT Transistors

The versatility of this new IGBT transistor makes it applicable in various settings. Not only can it be utilized in high-end industrial electromagnetic heating equipment like renewable energy systems, electric vehicle charging stations, and large machinery, but it is also well-suited for everyday household appliances such as kitchen stoves, microwave ovens with variable frequencies, and rice cookers. This is possible because the IGBT transistor effectively controls substantial electrical currents, enhancing the efficiency and reliability of electromagnetic heating devices while reducing power consumption in household appliances. In fact, appliances utilizing IGBT transistor technology can reduce power usage by up to 11% compared to traditional methods.

The positive temperature coefficient effect of Vce(sat) in IGBT transistors ensures that as the temperature increases, the saturation voltage Vce(sat) also increases. This effect improves the power distribution between multiple parallel IGBT transistors, leading to enhanced system reliability. In summary, when the temperature rises, the stability of parallel IGBT transistor operation is enhanced. Although this technical detail may seem small, it plays a crucial role in ensuring the steady operation of equipment.

The initial two devices in this series, namely the 25A STGWA25IH135DF2 and 35A STGWA35IH135DF2, utilize the TO-247 long-lead power package, which offers superior heat dissipation, enhanced mechanical strength, and improved electrical performance compared to other package forms.

STMicroelectronics' technological innovation not only expands the choices available to electronic engineers but also heralds numerous possibilities in the future electronic components market. This continuous innovation and progress serve as the driving force for electronic technology development and promote overall societal advancement. Undoubtedly, this technological innovation sets a new milestone in the electronic components industry. As electronic engineers or industry observers, are we ready to embrace this transformative change? STMicroelectronics' technological innovation not only provides us with more choices but also showcases the boundless potential of the future electronic components market.

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STMicroelectronics’ New Series of 1350V IGBT Transistors Improves Variability and Efficiency

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